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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features * Cascadable 50 Gain Block * High Output Power: +23 dBm Typical P1 dB at 1.0 GHz * Low Distortion: 33 dBm Typical IP3 at 1.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * Hermetic Metal/Beryllia Microstrip Package BeO disk package for good thermal characteristics. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 200 mil BeO Package Description The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Typical Biasing Configuration R bias VCC > 15 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 12 V 2 5965-9582E 6-358 MSA-0520 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 225 mA 3.0 W +25 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 25C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 40 mW/C for TC > 125C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol P1 dB GP GP f3 dB VSWR IP3 NF50 tD Vd dV/dT Parameters and Test Conditions: Id = 165 mA, ZO = 50 Output Power at 1 dB Gain Compression Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR Third Order Intercept Point 50 Noise Figure Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.0 GHz f = 0.1 to 2.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.0 GHz Units dBm dB dB GHz Min. 21.0 7.5 Typ. 23.0 8.5 0.75 2.8 2.0:1 2.5:1 Max. 9.5 dBm dB psec V mV/C 10.5 33.0 6.5 170 12.0 -16.0 13.5 Notes: 1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). 6-359 MSA-0520 Typical Scattering Parameters (TA = 25C, Id = 165 mA) Freq. MHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 3500 4000 .57 .25 .15 .11 .10 .10 .11 .13 .15 .22 .30 .37 .41 .45 .46 -38 -90 -111 -138 -152 -152 -147 -142 -140 -142 -156 -170 170 149 124 14.4 10.7 9.5 8.9 8.8 8.7 8.6 8.5 8.4 8.0 7.4 6.7 5.6 4.5 3.3 5.25 3.42 2.97 2.80 2.75 2.72 2.70 2.67 2.64 2.52 2.36 2.16 1.91 1.68 1.45 165 160 163 166 163 152 140 128 115 85 55 33 8 -16 -40 -19.4 -14.9 -14.4 -14.2 -14.1 -14.1 -14.0 -14.1 -14.1 -13.7 -13.3 -12.9 -12.7 -12.1 -11.7 .107 .180 .190 .195 .197 .198 .199 .199 .198 .206 .216 .227 .232 .249 .259 38 17 9 3 1 -2 -4 -6 -8 -12 -16 -18 -23 -31 -39 .67 .29 .18 .11 .10 .14 .18 .22 .27 .34 .43 .48 .51 .55 .56 -35 -81 -97 -113 -125 -123 -123 -127 -131 -143 -158 -166 -177 173 162 0.57 0.93 1.10 1.16 1.17 1.16 1.14 1.12 1.09 0.98 0.85 0.75 0.70 0.63 0.66 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 10 200 TC = +100C TC = +25C 8 0.1 GHz 36 IP3 (dBm) 150 TC = -50C 32 IP3 GAIN (dB) I d (mA) 6 0.5 GHz 1.0 GHz 2.0 GHz 1.5 GHz 28 100 24 50 4 P1 dB (dBm) P1 dB 20 2 0 14 0 16 18 20 22 24 26 28 30 0 3 6 9 Vd (V) 12 15 POWER OUT (dBm) 16 80 120 160 Id (mA) 200 Figure 1. Typical Gain vs. Power Out, TA = 25C, Id = 165 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz. 4 28 26 0.5 GHz 10 8 3 Output P1 dB (dBm) 24 Gp (dB) VSWR 6 22 20 1.0 GHz 2 4 Id = 200 mA Id = 165 mA Id = 80 mA 0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY, (GHz) 1 Input 2 18 16 -50 2.0 GHz +25 +100 CASE TEMPERATURE (C) Figure 4. Output Power @ 1 dB Gain Compression vs. Temperature, Id = 165 mA. Figure 5. Gain vs. Frequency. Figure 6. VSWR vs. Frequency, Id = 165 mA. 6-360 200 mil BeO Package Dimensions 4 .300 .025 7.62 .64 45 1 RF INPUT NO REFERENCE GROUND .060 1.52 .048 .010 1.21 .25 2 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 3. Base of package is electrically isolated. .004 .002 .10 .05 GROUND .030 .76 .128 3.25 .205 5.21 .023 .57 6-361 |
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